Title :
Low-high heterojunction of c-Si substrate and μc-Si:H film under rear contact for improvement of efficiency
Author :
Okamoto, S. ; Nishida, M. ; Yamasaki, I. ; Komatsu, Y. ; Kaneiwa, M. ; Nammori, T.
Author_Institution :
Energy Conversion Labs., Sharp Corp., Nara, Japan
Abstract :
For improvement of conversion efficiencies of single-crystalline silicon (c-Si) solar cells, the low-high heterojunction structure of p-type c-Si substrate and a highly conductive B doped hydrogenated microcrystalline silicon (c-Si:H) film with a wide optical bandgap under a rear contact has been investigated. This paper reports that a conversion efficiency of 21.1% was obtained for a 5 cm×5 cm c-Si solar cell with the μc-Si:H film. This result has come from the examinations of the depositing conditions of the film and the improvement of rear reflection using a SiN film between the μc-Si:H film and the rear contact. From TEM observations, it was clear that the μc-Si:H film consisted of two kinds of domain classified by the crystallite degree of spatial order of Si atoms
Keywords :
boron; electron microscopy; elemental semiconductors; hydrogen; p-n heterojunctions; semiconductor doping; semiconductor materials; semiconductor thin films; silicon; solar cells; transmission electron microscopy; μc-Si:H film; 21.1 percent; 5 cm; Si; Si-Si:H,B; SiN; TEM; c-Si substrate; conductive B doped c-Si:H film; conversion efficiency; deposition conditions; efficiency improvement; low-high heterojunction; rear contact; single-crystalline Si solar cells; wide optical bandgap; Conductive films; Crystallization; Heterojunctions; Optical films; Optical reflection; Photonic band gap; Photovoltaic cells; Semiconductor films; Silicon compounds; Substrates;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.519967
