Sub-10 nm epitaxial graphene nanoribbon FETs

Author

Tahy, K. ; Hwang, W.S. ; Tedesco, J.L. ; Myers-Ward, R.L. ; Campbell, P.M. ; Eddy, C.R., Jr. ; Gaskill, D.K. ; Xing, H. ; Seabaugh, A. ; Jena, D.

Author_Institution

Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA

fYear

2011

fDate

20-22 June 2011

Firstpage

39

Lastpage

40

Abstract

In this work, we report lithographically patterned GNRs on epitaxial graphene on SiC substrates. Specifically, we show the first top-gated GNR field-effect transistors (FETs) on epi-graphene substrates that exhibit the opening of a substantial energy bandgap (exceeding -0.15 eV at a ribbon width of 10 nm), respectable carrier mobility (700 800 cm2/Vs), high current modulation (10:1 at 300 K), and high current carrying capacity (0.3 mA/μm at VDS = 1 V) at the same time. Both single GNR and GNR array devices are reported.

Keywords

carrier mobility; energy gap; field effect transistors; graphene; nanostructured materials; SiC; SiC substrate; carrier mobility; current modulation; energy bandgap; epi-graphene substrate; epitaxial graphene nanoribbon FET; first top-gated GNR field-effect transistor; lithographically patterned GNR; size 10 nm; Arrays; Current measurement; FETs; Logic gates; Photonic band gap; Temperature; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference (DRC), 2011 69th Annual

Conference_Location

Santa Barbara, CA

ISSN

1548-3770

Print_ISBN

978-1-61284-243-1

Electronic_ISBN

1548-3770

Type

conf

DOI

10.1109/DRC.2011.5994411

Filename

5994411