Title :
Sub-10 nm epitaxial graphene nanoribbon FETs
Author :
Tahy, K. ; Hwang, W.S. ; Tedesco, J.L. ; Myers-Ward, R.L. ; Campbell, P.M. ; Eddy, C.R., Jr. ; Gaskill, D.K. ; Xing, H. ; Seabaugh, A. ; Jena, D.
Author_Institution :
Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA
Abstract :
In this work, we report lithographically patterned GNRs on epitaxial graphene on SiC substrates. Specifically, we show the first top-gated GNR field-effect transistors (FETs) on epi-graphene substrates that exhibit the opening of a substantial energy bandgap (exceeding -0.15 eV at a ribbon width of 10 nm), respectable carrier mobility (700 800 cm2/Vs), high current modulation (10:1 at 300 K), and high current carrying capacity (0.3 mA/μm at VDS = 1 V) at the same time. Both single GNR and GNR array devices are reported.
Keywords :
carrier mobility; energy gap; field effect transistors; graphene; nanostructured materials; SiC; SiC substrate; carrier mobility; current modulation; energy bandgap; epi-graphene substrate; epitaxial graphene nanoribbon FET; first top-gated GNR field-effect transistor; lithographically patterned GNR; size 10 nm; Arrays; Current measurement; FETs; Logic gates; Photonic band gap; Temperature; Temperature measurement;
Conference_Titel :
Device Research Conference (DRC), 2011 69th Annual
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-61284-243-1
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2011.5994411
