Title :
Observation of trap-assisted steep sub-threshold swing in schottky source/drain Al2O3/InAlN/GaN MISHEMT
Author :
Zhou, Qi ; Chen, Hongwei ; Zhou, Chunhua ; Feng, Zhihong ; Cai, Shujun ; Chen, Kevin J.
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Abstract :
The Schottky source/drain Al2O3/InAlN/GaN MISHEMTs feature steep switch-on behavior assisted by a dynamic charge-detrapping process is experimentally demonstrated. The SSD MISHEMTs exhibit steep SS (~20 mV/dec), high On/Off ratio (-109) and appreciable drive current (230mA/mm). The low SS is maintained over a wide range of drain bias voltage and temperature.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; wide band gap semiconductors; Al2O3-InAlN-GaN; Schottky source/drain MISHEMT; dynamic charge-detrapping process; trap-assisted steep sub-threshold swing; Gallium nitride; Logic gates;
Conference_Titel :
Device Research Conference (DRC), 2011 69th Annual
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-61284-243-1
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2011.5994417
