Towards electronics at 1000 °C

Author

Maier, D. ; Alomari, M. ; Grandjean, N. ; Carlin, J-F ; Diforte-Poisson, M-A ; Dua, C. ; Delage, S.L. ; Kohn, E.

Author_Institution

Inst. of Electron Devices & Circuits, Univ. of Ulm, Ulm, Germany

fYear

2011

fDate

20-22 June 2011

Firstpage

73

Lastpage

74

Abstract

High temperature electronics is up to now essentially limited to approx. 500°C by the high temperature properties of the active semiconductor elements mostly based on SiC. Sensing at even higher temperature relies therefore mostly on non-semiconductor components essentially limiting the systems complexities. However in recent years III-Nitride heterostructures, namely lattice matched InAlN/GaN heterostructures, have become an alternative. In an initial proof-of-concept experiment in 2006 1000°C operation could be demonstrated for a short period of time.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high-temperature electronics; indium compounds; semiconductor heterojunctions; silicon compounds; temperature sensors; wide band gap semiconductors; III-nitride heterostructures; InAlN-GaN; SiC; active semiconductor elements; high temperature electronics; high temperature properties; lattice matched heterostructures; nonsemiconductor components; semiconductor heterostructures; temperature 1000 degC; temperature sensing;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference (DRC), 2011 69th Annual

Conference_Location

Santa Barbara, CA

ISSN

1548-3770

Print_ISBN

978-1-61284-243-1

Electronic_ISBN

1548-3770

Type

conf

DOI

10.1109/DRC.2011.5994418

Filename

5994418