The effect of field effect device channel dimensions on the effective mobility of graphene

In this paper, the mobility behavior in graphene devices was studied as a function of channel dimensions. The extracted mobility in back gated graphene was found to depend on channel dimension. For a given channel width, the length dependence is attributed to the device operating in both the quasi ballistic and the diffusive regimes, as previously reported. The width dependence however is partially attributed to edge scattering and partially to enhanced conductivity in the channel as a result of electrostatically induced charge accumulation along the edges. This previously overlooked dependence could be a major contributing factor to the scatter in mobility values that have been reported.