Title :
The effect of N2 partial pressure on the properties of Nb-Si-N films
Author :
Song, Zhongxiao ; Liu, Chunliang ; Xu, Kewei
Author_Institution :
Minist. of Educ., Xi´´an Jiaotong Univ., China
Abstract :
Nb-Si-N films were sputtered by RF reactive magnetron sputtering with different N2 partial pressure. The effect of N2 partial pressure on the properties of Nb-Si-N film was studied. Energy dispersive X-ray spectroscopy, X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy, and atomic force microscope, and four-point probe method were employed to characterize the microstructure and properties of the Nb-Si-N films. The results reveal that as the N2 partial pressure increases the Nb/Si ratio and the surface roughness decrease. With the increase of N2 partial pressure the microstructure of Nb-Si-N film changes from the composite that consists of nano-grain NbN and amorphous SiNx to the composite that consists of amorphous NbN and SiNx phases. As the bias increased the ε-NbN phase increased. The sheet resistance of Nb-Si-N film also increases as the N2 partial pressure increase.
Keywords :
X-ray spectroscopy; atomic force microscopy; grain size; niobium compounds; nitridation; nitrogen; sputter deposition; surface roughness; transmission electron microscopy; N2; NbSiN; NbSiN films; RF reactive magnetron sputtering; X-ray diffraction; X-ray photoelectron spectroscopy; atomic force microscope; energy dispersive X-ray spectroscopy; four-point probe method; microstructure; partial pressure; sheet resistance; surface roughness; transmission electron microscopy; Amorphous magnetic materials; Amorphous materials; Atomic force microscopy; Microstructure; Photoelectron microscopy; Radio frequency; Silicon compounds; Spectroscopy; Sputtering; Transmission electron microscopy;
Conference_Titel :
Vacuum Electron Sources Conference, 2004. Proceedings. IVESC 2004. The 5th International
Print_ISBN :
0-7803-8437-7
DOI :
10.1109/IVESC.2004.1414268
