Title :
In0.425Al0.575As/In0.65Ga0.35As metamorphic HEMT on GaAs
Author :
Chen, Yeong-Jia ; Wang, Zhou-Bin ; Su, Ke-Hua ; Hsu, Wei-Chou
Author_Institution :
Dept. of Electr. Eng., National Cheng-Kung Univ., Tainan, Taiwan
Abstract :
A δ-doped In0.425Al0.575As/ InGaAs metamorphic high electron mobility transistor (MHEMT) has been fabricated successfully and demonstrated. The In0.425Al0.575As Schottky layer provides good breakdown voltage due to larger energy-gap than that of In0.52Al0.48As. Experimentally, a high extrinsic transconductance of 277 mS/mm with VDS = 2 V and a high drain-source saturation current density of 484 mA/mm with VGS =0 V are obtained for a 0.65×200 μm2 device at 300 K. Due to good carrier confinement in the channel layer, good pinch-off characteristic can be achieved. The measured fT and fmax for a 0.65 μm gate device are 60.5 and 108.5 GHz at VDS = 2 V and VGS = -1.5V. The NFminis 0.93 dB at 2.4 GHz, and the associated gain is 23.1 dB.
Keywords :
III-V semiconductors; Schottky barriers; current density; energy gap; gallium compounds; high electron mobility transistors; indium compounds; 0.65 micron; 0.93 dB; 2 V; 2.4 GHz; 23.1 dB; 300 K; InAlAs; InGaAs; Schottky layer; breakdown voltage; carrier confinement; extrinsic transconductance; metamorphic HEMT; pinch-off characteristic; saturation current density; Buffer layers; Carrier confinement; Gallium arsenide; HEMTs; Indium gallium arsenide; Indium phosphide; MODFETs; Substrates; Voltage; mHEMTs;
Conference_Titel :
Vacuum Electron Sources Conference, 2004. Proceedings. IVESC 2004. The 5th International
Print_ISBN :
0-7803-8437-7
DOI :
10.1109/IVESC.2004.1414280
