Mapping the optical properties of SOI-type photonic crystal waveguides

Author

Dulkeith, E. ; McNab, S.J. ; Vlasov, Yu.A.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY

fYear

2005

fDate

17-17 June 2005

Firstpage

590

Lastpage

590

Abstract

In this article, we report on systematic mapping of the transmission properties of W1 waveguides as a function of the hole radius, slab thickness, and crystal length. Silicon-on-insulator (SOI) 200 mm diameter unibond wafers were patterned with electron beam lithography and processed on a 200 mm CMOS fabrication line. A periodic array of holes was etched through the slab. The waveguide was defined by omitting one row of holes from the photonic crystal lattice

Keywords

electron beam lithography; optical fabrication; optical materials; optical waveguides; photonic crystals; silicon compounds; silicon-on-insulator; 200 mm; CMOS fabrication line; SOI-type; Si-SiO₂; W1 waveguides; electron beam lithography; optical properties; periodic array; photonic crystal lattice; photonic crystal waveguides; silicon-on-insulator; systematic mapping; transmission properties; unibond wafers; CMOS process; Electron beams; Electron optics; Etching; Fabrication; Lithography; Optical waveguides; Photonic crystals; Silicon on insulator technology; Slabs;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe, 2005. CLEO/Europe. 2005 Conference on

Conference_Location

Munich

Print_ISBN

0-7803-8974-3

Type

conf

DOI

10.1109/CLEOE.2005.1568366

Filename

1568366