DocumentCode
2903053
Title
Die Bonding Process Research for SOI Membrane Pressure Sensor
Author
Guan, Rongfeng
Author_Institution
Suzhou Univ. of Sci. & Technol., Suzhou
fYear
2007
fDate
14-17 Aug. 2007
Firstpage
1
Lastpage
1
Abstract
Silicon pressure sensors which are based on piezoresistive effect are in use for many fields, because of their high performance and productivity. However, when work environment temperature is over 125degC, silicon piezoresistive pressure sensors have not been used because of worse temperature performance. SOI piezoresistor pressure chip has better temperature performance than silicon pressure sensor and has evidence advantage in aspects of resisting temperature, radiation and corrosion. The SOI pressure sensor of beam-diaphragm packaging structure which can resist high temperature of 250degC has been developed and its packaging process is analyzed in the paper.
Keywords
bonding processes; electronics packaging; piezoresistive devices; pressure sensors; silicon-on-insulator; SOI membrane pressure sensor; SOI piezoresistor pressure chip; beam-diaphragm packaging structure; die bonding process; piezoresistive effect; piezoresistive pressure sensors; silicon pressure sensors; temperature 250 C; Biomembranes; Corrosion; Microassembly; Packaging; Productivity; Resists; Silicon; Stress; Temperature measurement; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Packaging Technology, 2007. ICEPT 2007. 8th International Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-1392-8
Electronic_ISBN
978-1-4244-1392-8
Type
conf
DOI
10.1109/ICEPT.2007.4441396
Filename
4441396
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