• DocumentCode
    2903053
  • Title

    Die Bonding Process Research for SOI Membrane Pressure Sensor

  • Author

    Guan, Rongfeng

  • Author_Institution
    Suzhou Univ. of Sci. & Technol., Suzhou
  • fYear
    2007
  • fDate
    14-17 Aug. 2007
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Silicon pressure sensors which are based on piezoresistive effect are in use for many fields, because of their high performance and productivity. However, when work environment temperature is over 125degC, silicon piezoresistive pressure sensors have not been used because of worse temperature performance. SOI piezoresistor pressure chip has better temperature performance than silicon pressure sensor and has evidence advantage in aspects of resisting temperature, radiation and corrosion. The SOI pressure sensor of beam-diaphragm packaging structure which can resist high temperature of 250degC has been developed and its packaging process is analyzed in the paper.
  • Keywords
    bonding processes; electronics packaging; piezoresistive devices; pressure sensors; silicon-on-insulator; SOI membrane pressure sensor; SOI piezoresistor pressure chip; beam-diaphragm packaging structure; die bonding process; piezoresistive effect; piezoresistive pressure sensors; silicon pressure sensors; temperature 250 C; Biomembranes; Corrosion; Microassembly; Packaging; Productivity; Resists; Silicon; Stress; Temperature measurement; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Packaging Technology, 2007. ICEPT 2007. 8th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-1392-8
  • Electronic_ISBN
    978-1-4244-1392-8
  • Type

    conf

  • DOI
    10.1109/ICEPT.2007.4441396
  • Filename
    4441396