• DocumentCode
    2903057
  • Title

    High Speed, Minimal Area, and Low Power SEC Code for DRAMs with Large I/O Data Widths

  • Author

    Cha, Sang-Uhn ; Yoon, Hongil

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Yonsei Univ., Seoul
  • fYear
    2007
  • fDate
    27-30 May 2007
  • Firstpage
    3026
  • Lastpage
    3029
  • Abstract
    Many ECCs have been proposed to enhance the reliability of DRAMs, but most of them lack in the aspects of practical feasibility. We prioritize on how well and efficiently code could be actually implemented and propose high speed, minimal area, and low power SEC code for DRAMs with large I/O data widths. The proposed code minimizes the column weight, row weight and total weight of the H-matrix. Consequently, the area overhead and power consumption of the check bit generator are reduced by 17.7% at the most. The propagation delay is also decreased by reducing the level of XOR trees. Moreover, maximal power reduction is possible as the optimal H-matrix variants can be formulated to specifically tailor for various system applications with different spatial and temporal data correlations.
  • Keywords
    DRAM chips; error correction codes; logic design; low-power electronics; DRAM reliability; I/O data widths; SEC code; XOR trees; check bit generator; optimal H-matrix variants; propagation delay; single error correction code; Character generation; Circuits; Data engineering; Decoding; Energy consumption; Error correction codes; Power engineering and energy; Power generation; Propagation delay; Reliability engineering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium on
  • Conference_Location
    New Orleans, LA
  • Print_ISBN
    1-4244-0920-9
  • Electronic_ISBN
    1-4244-0921-7
  • Type

    conf

  • DOI
    10.1109/ISCAS.2007.377984
  • Filename
    4253316