Title :
Analysis on the Effects of Packaging Materials on Structural Thermal Stress in Stacked Chip Scale Package
Author :
Cheng, Xiu-Lan ; Qian, Feng
Author_Institution :
Microelectron. Building, Shanghai
Abstract :
SCSP (stacked chip scale package) attracts more and more attentions in advanced packages application with light weight, thin and small size, high reliability, low power and high storage capability. However, more and more physical and electrical issues are reported being caused by package induced thermal stress in SCSP recently. After the SCSP packaging failure modes caused by structural stress due to packaging structure design, materials and process flow are theoretically discussed, the effects of material factors, including glass transition temperature (Tg) of die attach film and curing temperature of mold compound, on package induced thermal stress are focused to be simulated and analyzed with finite element analysis (FEA). The simulations show that higher Tg of die attach film can effectively reduce peak-to-peak thermal stress of SCSP. and lower curing temperature of mold compound can obviously decrease both the maximum thermal stress and peak-to-peak thermal stress. In other word, high Tg of die attach film and low curing temperature of mold compound can greatly relieve the thermal stress conditions and are helpful to avoid chip crack failure and device failures caused by transconductance shift.
Keywords :
chip scale packaging; curing; finite element analysis; glass transition; reliability; thermal stresses; curing temperature; finite element analysis; glass transition temperature; mold compound; package induced thermal stress; packaging materials; packaging structure; reliability; stacked chip scale package; structural thermal stress; Cause effect analysis; Chip scale packaging; Curing; Failure analysis; Glass; Microassembly; Process design; Temperature; Thermal factors; Thermal stresses;
Conference_Titel :
Electronic Packaging Technology, 2007. ICEPT 2007. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1392-8
Electronic_ISBN :
978-1-4244-1392-8
DOI :
10.1109/ICEPT.2007.4441397