DocumentCode
2903074
Title
A Self-Biased Charge-Transfer Sense Amplifier
Author
Patil, Sandeep ; Wieckowski, Michael ; Margala, Martin
Author_Institution
Dept. of Electr. & Comput. Eng., Rochester Univ., NY
fYear
2007
fDate
27-30 May 2007
Firstpage
3030
Lastpage
3033
Abstract
A self-biased charge-transfer sense amplifier (SB-CTSA) is proposed for applications in high performance static memory. The new design incorporates an internal biasing mechanism along with a static output latch that can store the result from a read cycle indefinitely at no additional cost in power. It exhibits 23% faster sensing delay and a 37% reduction in read energy when compared to a recently proposed CTSA structure. In addition, the SB-CTSA design exhibits low sensitivity to both input capacitance and input capacitance mismatch.
Keywords
amplifiers; charge-coupled devices; flip-flops; high performance static memory; input capacitance mismatch; internal biasing mechanism; self-biased charge-transfer sense amplifier; static output latch; Application software; Capacitance; Charge transfer; Costs; Delay; Integrated circuit interconnections; Latches; Multiplexing; Random access memory; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium on
Conference_Location
New Orleans, LA
Print_ISBN
1-4244-0920-9
Electronic_ISBN
1-4244-0921-7
Type
conf
DOI
10.1109/ISCAS.2007.377985
Filename
4253317
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