• DocumentCode
    2903074
  • Title

    A Self-Biased Charge-Transfer Sense Amplifier

  • Author

    Patil, Sandeep ; Wieckowski, Michael ; Margala, Martin

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Rochester Univ., NY
  • fYear
    2007
  • fDate
    27-30 May 2007
  • Firstpage
    3030
  • Lastpage
    3033
  • Abstract
    A self-biased charge-transfer sense amplifier (SB-CTSA) is proposed for applications in high performance static memory. The new design incorporates an internal biasing mechanism along with a static output latch that can store the result from a read cycle indefinitely at no additional cost in power. It exhibits 23% faster sensing delay and a 37% reduction in read energy when compared to a recently proposed CTSA structure. In addition, the SB-CTSA design exhibits low sensitivity to both input capacitance and input capacitance mismatch.
  • Keywords
    amplifiers; charge-coupled devices; flip-flops; high performance static memory; input capacitance mismatch; internal biasing mechanism; self-biased charge-transfer sense amplifier; static output latch; Application software; Capacitance; Charge transfer; Costs; Delay; Integrated circuit interconnections; Latches; Multiplexing; Random access memory; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium on
  • Conference_Location
    New Orleans, LA
  • Print_ISBN
    1-4244-0920-9
  • Electronic_ISBN
    1-4244-0921-7
  • Type

    conf

  • DOI
    10.1109/ISCAS.2007.377985
  • Filename
    4253317