DocumentCode :
2903117
Title :
Simultaneous spin and charge transport in gated Si devices
Author :
Li, Jing ; Appelbaum, Ian
Author_Institution :
Dept. of Phys., Univ. of Maryland, College Park, MD, USA
fYear :
2011
fDate :
20-22 June 2011
Firstpage :
159
Lastpage :
160
Abstract :
In this work, lateral spin-transport devices employing ballistic hot-electron injection and detection methods are used to study temperature-dependent spin and charge transport controlled by an electrostatic back gate using native oxide (SiO2) insulator.
Keywords :
charge exchange; elemental semiconductors; hot carriers; monolithic integrated circuits; silicon; spin polarised transport; Si; ballistic hot-electron injection; detection methods; electrostatic back gate; gated Si devices; lateral spin-transport devices; native oxide insulator; temperature-dependent spin and charge transport; Clocks;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference (DRC), 2011 69th Annual
Conference_Location :
Santa Barbara, CA
ISSN :
1548-3770
Print_ISBN :
978-1-61284-243-1
Electronic_ISBN :
1548-3770
Type :
conf
DOI :
10.1109/DRC.2011.5994469
Filename :
5994469
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2903117
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