Wafer Level Micropackaging for Distributed MEMS Phase Shifters

A novel packaging structure which is performed using wafer level micropackaging on the thin silicon substrate as the distributed MEMS phase shifters wafer with vertical feedthrough is presented. The RF performances of proposed structure are investigated using Microwave Studio (CST). The results show that the insertion loss (S₂₁) and return loss (S₁₁) was -0.4-1.84 dB and under -10 dB at 1-50 GHz. respectively. And especially, the phase shifts of 360deg are obtained at 48 GHz. Tins indicate that the proposed packaging structure for the distributed MEMS phase shifters can provide the maximum amount of phase shift with the minimum amount of insertion loss and with return loss of less than -10 dB.