DocumentCode
2903240
Title
Scalable highly-anisotropic reactive ion etch on Si for nanophotonics
Author
Liang, Eih-Zhe ; Lin, Ching-Fuh
Author_Institution
Graduate Inst. of Electro-opt. Eng., Nat. Taiwan Univ., Taipei
fYear
2005
fDate
17-17 June 2005
Firstpage
605
Lastpage
605
Abstract
In this work, we demonstrate both scalability down to decanometer and high anisotropy up to 90% in fabrication of Si nanostructure by reactive ion etching. Silicon nanorods with 20 nm diameter size are fabricated on single-crystalline silicon surface
Keywords
elemental semiconductors; nanostructured materials; nanotechnology; optical fabrication; optical materials; sputter etching; 20 nm; Si; reactive ion etching; silicon nanorod fabrication; single-crystalline silicon surface; Anisotropic magnetoresistance; Etching; Nanoparticles; Nanophotonics; Nanostructures; Scalability; Shape; Silicon compounds; Sulfur hexafluoride; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Europe, 2005. CLEO/Europe. 2005 Conference on
Conference_Location
Munich
Print_ISBN
0-7803-8974-3
Type
conf
DOI
10.1109/CLEOE.2005.1568381
Filename
1568381
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