Title :
Spin-torque switchable perpendicular magnetic junctions for solid-state memory
Author :
Sun, J.Z. ; Robertazzi, R.P. ; Nowak, J.J. ; Trouilloud, P.L. ; Hu, G. ; Gaidis, M.C. ; Brown, S.L. ; Abraham, D.W. ; Sullivan, E. J O ; Gallagher, W.J. ; Worledge, D.C. ; Kent, Alexander D.
Author_Institution :
T.J. Watson Res. Center, IBM-MagIC MRAM Dev. Alliance, IBM, Yorktown Heights, NY, USA
Abstract :
Spin-torque switchable junctions are the leading candidates for future generations of magnetic random-access memory (MRAM) technologie. Earlier, spin-valves with perpendicular magnetic anisotropy (PMA) were shown to lower the switching threshold current, consistent with spin torque switching dynamics. Recently, MgO-based magnetic tunnel junctions (MTJs) were developed to have fully PMA states, improving switching speed and margin. The authors review the essential device properties of some such PMA junctions.
Keywords :
magnesium compounds; magnetic tunnelling; perpendicular magnetic anisotropy; random-access storage; spin valves; MgO; magnetic random-access memory; magnetic tunnel junctions; perpendicular magnetic anisotropy; solid-state memory; spin torque switchable junctions; spin-valves; switchable perpendicular magnetic junctions; switching threshold current; Current measurement; Frequency measurement; Lead; Semiconductor device measurement; Switches;
Conference_Titel :
Device Research Conference (DRC), 2011 69th Annual
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-61284-243-1
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2011.5994475
