DocumentCode
2903380
Title
An Enhanced SRAM BISR Design with Reduced Timing Penalty
Author
Denq, Li-Ming ; Wang, Tzu-Chiang ; Wu, Cheng-Wen
Author_Institution
Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu
fYear
2006
fDate
20-23 Nov. 2006
Firstpage
25
Lastpage
30
Abstract
Redundancy repair is an effective yield-enhancement technique for memories. There are many previously proposed repair methodologies, such as the popular repair methodology based on the concept of address remapping mechanism achieved by address comparison and address reconfiguration. However, a BISR design with a typical address remapping mechanism usually involves significant timing penalty. Therefore, we propose a new address remapping scheme with a write buffer to reduce the timing penalty. Our experiments show that with the proposed address remapping scheme and redundancy architecture, the timing penalty of our BISR scheme is the same with that of the built-in self-test (BIST) circuit-only one multiplexer delay for both the inputs and outputs
Keywords
SRAM chips; built-in self test; integrated circuit testing; integrated circuit yield; SRAM chips; address comparison; address reconfiguration; address remapping; built-in self-test; redundancy repair; timing penalty; write buffer; yield enhancement; Built-in self-test; Chemical elements; Circuit faults; Delay; Multiplexing; Random access memory; Redundancy; Registers; Testing; Timing;
fLanguage
English
Publisher
ieee
Conference_Titel
Test Symposium, 2006. ATS '06. 15th Asian
Conference_Location
Fukuoka
ISSN
1081-7735
Print_ISBN
0-7695-2628-4
Type
conf
DOI
10.1109/ATS.2006.260988
Filename
4030736
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