• DocumentCode
    2903380
  • Title

    An Enhanced SRAM BISR Design with Reduced Timing Penalty

  • Author

    Denq, Li-Ming ; Wang, Tzu-Chiang ; Wu, Cheng-Wen

  • Author_Institution
    Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu
  • fYear
    2006
  • fDate
    20-23 Nov. 2006
  • Firstpage
    25
  • Lastpage
    30
  • Abstract
    Redundancy repair is an effective yield-enhancement technique for memories. There are many previously proposed repair methodologies, such as the popular repair methodology based on the concept of address remapping mechanism achieved by address comparison and address reconfiguration. However, a BISR design with a typical address remapping mechanism usually involves significant timing penalty. Therefore, we propose a new address remapping scheme with a write buffer to reduce the timing penalty. Our experiments show that with the proposed address remapping scheme and redundancy architecture, the timing penalty of our BISR scheme is the same with that of the built-in self-test (BIST) circuit-only one multiplexer delay for both the inputs and outputs
  • Keywords
    SRAM chips; built-in self test; integrated circuit testing; integrated circuit yield; SRAM chips; address comparison; address reconfiguration; address remapping; built-in self-test; redundancy repair; timing penalty; write buffer; yield enhancement; Built-in self-test; Chemical elements; Circuit faults; Delay; Multiplexing; Random access memory; Redundancy; Registers; Testing; Timing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Test Symposium, 2006. ATS '06. 15th Asian
  • Conference_Location
    Fukuoka
  • ISSN
    1081-7735
  • Print_ISBN
    0-7695-2628-4
  • Type

    conf

  • DOI
    10.1109/ATS.2006.260988
  • Filename
    4030736