Title :
Lateral gate suspended-body carbon nanotube field-effect-transistors with sub-100nm air gap by precise positioning method
Author :
Cao, Ji ; Ionescu, Adrian M.
Author_Institution :
Nanoelectronic Devices Lab. (Nanolab), Ecole Polytech. Fed. de Lausanne, Lausanne, Switzerland
Abstract :
We report, for the first time, a self-aligned lateral gate suspended-body CNTFET with sub-lOOnm air gap fabricated by an improved precise positioning method.. The superior I-V characteristics of the lateral gate CNT FET are experimentally studied. The proposed suspended-body CNTFETs hold promise for bottom-up fabrication of resonant NEMS devices for sensing and RF applications.
Keywords :
air gaps; carbon nanotubes; field effect transistors; nanoelectromechanical devices; air gap; lateral gate suspended-body carbon nanotube field-effect-transistors; precise positioning method; resonant NEMS devices; CNTFETs; Silicon;
Conference_Titel :
Device Research Conference (DRC), 2011 69th Annual
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-61284-243-1
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2011.5994482
