• DocumentCode
    2903494
  • Title

    Delta-IDDQ Testing of Resistive Short Defects

  • Author

    Engelke, Piet ; Polian, Ilia ; Manhaeve, Hans ; Renovell, Michel ; Becker, Bernd

  • Author_Institution
    Albert-Ludwigs Univ., Freiburg
  • fYear
    2006
  • fDate
    Nov. 2006
  • Firstpage
    63
  • Lastpage
    68
  • Abstract
    This paper addresses the efficiency of IDDQ and more specifically Delta- IDDQ testing when using a realistic short defect model that properly considers the relation between the resistance of the short and its detectability. The results clearly show that the Delta-IDDQ approach covers a large number of resistive shorts missed by conventional logic testing, requiring only a relatively small vector set. In addition a significant number of defects which are proven to be undetectable by logic testing but may deteriorate and result in reliability failures are detected. The Delta- IDDQ threshold and thus the equipment sensitivity is shown to be critical for the test quality. Furthermore, the validity of the traditional IDDQ fault models when considering resistive short defects is found to be limited. For instance, the use of the fault-free next-state function for sequential IDDQ fault simulation is shown to result in a wrong classification of some resistive short defects. This is the first systematic study of IDDQ testing of resistive short defects. The impact of the threshold on the defect coverage is quantified for the first time. Although the simulation results are based upon a 0.35mum technology, the results and methodology can be transferred to state-of-the-art and NanoTechnologies
  • Keywords
    electric resistance; fault simulation; integrated circuit testing; logic testing; 0.35 micron; Delta-IDDQ testing; equipment sensitivity; fault simulation; logic testing; nanotechnologies; reliability failures; resistance; resistive defects; short defect model; test quality; CMOS technology; Circuit faults; Circuit simulation; Circuit testing; Current measurement; Electrical capacitance tomography; Leakage current; Logic testing; System testing; Transistors; Delta-IDDQ; Early-life failures; IDDQ testing; Resistive defects;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Test Symposium, 2006. ATS '06. 15th Asian
  • Conference_Location
    Fukuoka
  • ISSN
    1081-7735
  • Print_ISBN
    0-7695-2628-4
  • Type

    conf

  • DOI
    10.1109/ATS.2006.260994
  • Filename
    4030742