Investigation on superlattice heterostructures for steep-slope nanowire FETs

In this work we investigate the feasibility of a steep-slope nanowire FET based on the filtering of the high-energy electrons via a superlattice heterostructure in the source extension. Several material pairs are investigated for the superlattice, with the aim to identify the most promising ones with respect to the typical FET evaluation metrics. We found that the GaN-AlGaN pair provides excellent results, which led us to optimize its device structure. We obtain a peak SS ≈ 15 mV/dec and an ON-current approaching 1mA/μm.