Title :
Investigation on superlattice heterostructures for steep-slope nanowire FETs
Author :
Gnani, E. ; Maiorano, P. ; Reggiani, S. ; Gnudi, A. ; Baccarani, G.
Author_Institution :
ARCES & DEIS, Univ. of Bologna, Bologna, Italy
Abstract :
In this work we investigate the feasibility of a steep-slope nanowire FET based on the filtering of the high-energy electrons via a superlattice heterostructure in the source extension. Several material pairs are investigated for the superlattice, with the aim to identify the most promising ones with respect to the typical FET evaluation metrics. We found that the GaN-AlGaN pair provides excellent results, which led us to optimize its device structure. We obtain a peak SS ≈ 15 mV/dec and an ON-current approaching 1mA/μm.
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; gallium compounds; nanowires; semiconductor heterojunctions; semiconductor quantum wires; wide band gap semiconductors; GaN-AlGaN; device structure; filtering; high-energy electrons; steep-slope nanowire FET; superlattice heterostructures; Degradation; Doping; FETs; Filtering; Superlattices; Switches;
Conference_Titel :
Device Research Conference (DRC), 2011 69th Annual
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-61284-243-1
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2011.5994497
