• DocumentCode
    2903776
  • Title

    Anomalous output conductance in N-polar GaN-based MIS-HEMTs

  • Author

    Wong, Man Hoi ; Singisetti, Uttam ; Lu, Jing ; Speck, James S. ; Mishra, Umesh K.

  • Author_Institution
    Electr. & Comput. Eng. Dept., Univ. of California, Santa Barbara, CA, USA
  • fYear
    2011
  • fDate
    20-22 June 2011
  • Firstpage
    211
  • Lastpage
    212
  • Abstract
    We propose that the anomalous output conductance in N-polar GaN MIS-HEMTs was caused by ionization of donor-like traps from a net negative polarization interface. It is a low-frequency phenomenon that changes the VT of the device with VD, while no evidence of increased output conductance or related device performance degradation was found under RF conditions. Appropriate back-barrier designs are needed to mitigate the DC-GDS in N-polar GaN MIS-HEMTs.
  • Keywords
    III-V semiconductors; MIS devices; gallium compounds; high electron mobility transistors; ionisation; millimetre wave transistors; wide band gap semiconductors; 2DEG channel; GaN; N-polar MIS-HEMT; anomalous output conductance; donor-like traps; equilibrium Fermi energy; high electron mobility transistors; ionization; net negative polarization interface; next generation millimeter-wave electronics; Facsimile; Gallium nitride; HEMTs; Q measurement; Silicon carbide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2011 69th Annual
  • Conference_Location
    Santa Barbara, CA
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-61284-243-1
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2011.5994502
  • Filename
    5994502
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2903776