Title :
Anomalous output conductance in N-polar GaN-based MIS-HEMTs
Author :
Wong, Man Hoi ; Singisetti, Uttam ; Lu, Jing ; Speck, James S. ; Mishra, Umesh K.
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of California, Santa Barbara, CA, USA
Abstract :
We propose that the anomalous output conductance in N-polar GaN MIS-HEMTs was caused by ionization of donor-like traps from a net negative polarization interface. It is a low-frequency phenomenon that changes the VT of the device with VD, while no evidence of increased output conductance or related device performance degradation was found under RF conditions. Appropriate back-barrier designs are needed to mitigate the DC-GDS in N-polar GaN MIS-HEMTs.
Keywords :
III-V semiconductors; MIS devices; gallium compounds; high electron mobility transistors; ionisation; millimetre wave transistors; wide band gap semiconductors; 2DEG channel; GaN; N-polar MIS-HEMT; anomalous output conductance; donor-like traps; equilibrium Fermi energy; high electron mobility transistors; ionization; net negative polarization interface; next generation millimeter-wave electronics; Facsimile; Gallium nitride; HEMTs; Q measurement; Silicon carbide;
Conference_Titel :
Device Research Conference (DRC), 2011 69th Annual
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-61284-243-1
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2011.5994502
