DocumentCode
2903849
Title
High performance GaN-on-Si power switch: Role of substrate bias in device characteristics
Author
Chu, Rongming ; Zehnder, Daniel ; Hughes, Brian ; Boutros, Karim
Author_Institution
HRL Labs. LLC, Malibu, CA, USA
fYear
2011
fDate
20-22 June 2011
Firstpage
223
Lastpage
224
Abstract
In this paper, we discuss the static (DC) and dynamic (switching) characteristics of the GaN-on-Si device, focusing on the impact of bias conditions applied on the Si substrate. It was found that state-of-the-art dynamic on-resistance characteristics of the GaN-on-Si switch can be achieved by properly terminating the Si substrate potential.
Keywords
III-V semiconductors; elemental semiconductors; gallium compounds; power semiconductor switches; silicon; substrates; wide band gap semiconductors; GaN-Si; device characteristics; high performance power switch; substrate bias; substrate potential; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference (DRC), 2011 69th Annual
Conference_Location
Santa Barbara, CA
ISSN
1548-3770
Print_ISBN
978-1-61284-243-1
Electronic_ISBN
1548-3770
Type
conf
DOI
10.1109/DRC.2011.5994508
Filename
5994508
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