Title :
High performance GaN-on-Si power switch: Role of substrate bias in device characteristics
Author :
Chu, Rongming ; Zehnder, Daniel ; Hughes, Brian ; Boutros, Karim
Author_Institution :
HRL Labs. LLC, Malibu, CA, USA
Abstract :
In this paper, we discuss the static (DC) and dynamic (switching) characteristics of the GaN-on-Si device, focusing on the impact of bias conditions applied on the Si substrate. It was found that state-of-the-art dynamic on-resistance characteristics of the GaN-on-Si switch can be achieved by properly terminating the Si substrate potential.
Keywords :
III-V semiconductors; elemental semiconductors; gallium compounds; power semiconductor switches; silicon; substrates; wide band gap semiconductors; GaN-Si; device characteristics; high performance power switch; substrate bias; substrate potential; Silicon; Substrates;
Conference_Titel :
Device Research Conference (DRC), 2011 69th Annual
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-61284-243-1
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2011.5994508
