Investigation on SnS film by RF sputtering for photovoltaic application

Author

Guang-Pu, Wei ; Zhi-Lin, Zhang ; Wei-Ming, Zhao ; Xiang-Hong, Gao ; Wei-Qun, Chen ; Tanamura, Hiromasa ; Yamaguchi, Masaki ; Noguchi, Hidenori ; Nagatomo, Takao ; Omoto, Osamu

Author_Institution

Shanghai Univ. of Sci. & Technol., China

Volume

1

fYear

1994

fDate

5-9 Dec 1994

Firstpage

365

Abstract

Tin sulfide (SnS) solar cell semiconductor thin films were prepared by an RF sputtering method. The component, crystal structure, optical properties and electrical properties of SnS films were measured. The relationship between the SnS films properties and the sputtering condition was discussed. Using Sb as a dopant and combining thermal annealing at elevated temperatures (about 400°C), n-type SnS homojunction solar cell thin films were obtained

Keywords

annealing; antimony; p-n junctions; semiconductor device testing; semiconductor doping; semiconductor thin films; solar cells; sputter deposition; sputtered coatings; tin compounds; RF sputtering; SnS:Sb; crystal structure; dopant; electrical properties; optical properties; p-n homojunction; photovoltaic application; solar cells; sputtering condition; thermal annealing; thin film semiconductor; Optical devices; Optical films; Photovoltaic cells; Photovoltaic systems; Radio frequency; Semiconductor films; Semiconductor thin films; Solar power generation; Sputtering; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

0-7803-1460-3

Type

conf

DOI

10.1109/WCPEC.1994.519977

Filename

519977