Title :
Lateral carrier injection with n-type modulation-doped quantum wells in VCSELs
Author :
Lin, Chin-Han ; Zheng, Yan ; Gross, Matthias ; Rodwell, Mark J.W. ; Coldren, Larry A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA
Abstract :
We have demonstrated a novel Field-Induced Charge-Separation Laser (FICSL) in a Vertical-Cavity Surface-Emitting Laser (VCSEL) embodiment. In addition to the initial optical modulation results that have been presented, we here for the first time present details on the novel lateral charge injection structure as well as the advanced bandgap engineering involved in the gate structure. These features together permit high-speed light modulation with a nearly constant injection current. The result is an entirely new concept for high-speed directly-modulated semiconductor lasers.
Keywords :
charge injection; energy gap; laser cavity resonators; optical modulation; quantum well lasers; surface emitting lasers; VCSEL; advanced bandgap engineering; field-induced charge-separation laser; gate structure; high-speed directly-modulated semiconductor lasers; high-speed light modulation; injection current; lateral carrier injection; n-type modulation-doped quantum wells; optical modulation; vertical-cavity surface-emitting laser embodiment; Logic gates; Planarization;
Conference_Titel :
Device Research Conference (DRC), 2011 69th Annual
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-61284-243-1
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2011.5994522
