Title :
Temperature Dependent Dielectric Properties of Polycrystalline Aluminum Oxide Substrates with Various Impurities
Author_Institution :
OAI/NASA, Cleveland
Abstract :
Temperature dependent dielectric properties of 92% and 99.6% polycrystalline aluminum oxide (Al2O3) substrate materials between room temperature and 550degC are reported, and compared with those of 96% Al2O3. Parallel-plate capacitors with aluminum oxide dielectrics and gold electrodes were used for measurement of the dielectric properties of these materials. The capacitance and parallel conductance of these Al2O3 materials were directly measured by an impedance meter at 120 Hz. 1 KHz. 10 KHz. 100 KHz. and 1 MHz. and the dielectric constant and dielectric loss were calculated from the measured capacitance and conductance data. The temperature and frequency dependent quality factor (dissipation factor) of these materials are presented.
Keywords :
Q-factor; alumina; capacitance; dielectric losses; gold; impurities; metallisation; permittivity; substrates; Al2O3; Au; dielectric constant; dielectric loss; dissipation factor; frequency 120 Hz to 1 MHz; frequency-dependent quality factor; gold metallization; impurity level; material capacitance; parallel conductance; parallel-plate capacitors; polycrystalline aluminum oxide substrates; temperature 293 K to 298 K; temperature-dependent dielectric properties; Aluminum oxide; Capacitance measurement; Conducting materials; Dielectric loss measurement; Dielectric materials; Dielectric measurements; Dielectric substrates; Impedance measurement; Impurities; Temperature dependence;
Conference_Titel :
Electronic Packaging Technology, 2007. ICEPT 2007. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1392-8
Electronic_ISBN :
978-1-4244-1392-8
DOI :
10.1109/ICEPT.2007.4441460
