DocumentCode :
2904223
Title :
A Field Programmable Memory BIST Architecture Supporting Algorithms with Multiple Nested Loops
Author :
Du, Xiaogang ; Mukherjee, Nilanjan ; Hill, Chris ; Cheng, Wu-Tung ; Reddy, Sudhakar
Author_Institution :
Mentor Graphics Corp., Wilsonville, OR
fYear :
2006
fDate :
Nov. 2006
Firstpage :
287
Lastpage :
292
Abstract :
Field programmable memory BIST controllers are becoming a necessity to target manufacturing defects in embedded memories. For 65nm and below, random defects are not the only ones affecting the yield of a process. Systematic as well as parametric defects are now the predominant causes of memory failures and have to be addressed. Conventional memory BIST algorithms are usually targeted to catch random defects. In order to catch such systematic and parametric defects, it is necessary to have the flexibility to apply new algorithms to embedded memories after manufacturing. In this paper, a field programmable memory BIST architecture is proposed to support multiple loops within a test step of an algorithm, including nested loops. These controllers, therefore, guarantee supporting complex algorithm necessary to target defects during failure analysis that could help yield ramp up or reduce test escapes. In addition, the proposed architecture is modular in nature and allows optimizing the complexity of the controller along with area and performance
Keywords :
built-in self test; failure analysis; field programmable gate arrays; integrated circuit yield; integrated memory circuits; logic testing; programmable controllers; 65 nm; BIST architecture supporting algorithms; complex algorithm; controllers; embedded memories; failure analysis; field programmable memory; manufacturing defects; memory failures; memory test algorithm; multiple nested loops; parametric defects; random defects; systematic defects; Automatic control; Automatic testing; Built-in self-test; Computer aided manufacturing; Computer architecture; Hardware; Manufacturing processes; Memory architecture; Random access memory; Silicon; Memory BIST; Memory Test Algorithm; Multiple Nested Loops; Programmable;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Test Symposium, 2006. ATS '06. 15th Asian
Conference_Location :
Fukuoka
ISSN :
1081-7735
Print_ISBN :
0-7695-2628-4
Type :
conf
DOI :
10.1109/ATS.2006.261033
Filename :
4030781
Link To Document :
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