Title :
N-polar GaN HEMTs with fmax > 300 GHz using high-aspect-ratio T-gate design
Author :
Denninghoff, D.J. ; Dasgupta, S. ; Brown, D.F. ; Keller, S. ; Speck, J. ; Mishra, U.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA
Abstract :
In this paper, we report measured fmax data of over 300 GHz on an MOCVD-grown N-polar GaN HEMT using a high-aspect-ratio T-gate. To our knowledge, this >; 300-GHz fmax value is the highest reported to date for N-polar GaN HEMTs and is 50% higher than the previously reported value (Nidhi et al., 2010).
Keywords :
III-V semiconductors; MOCVD; gallium compounds; high electron mobility transistors; GaN; MOCVD-grown N-polar GaN HEMT; high-aspect-ratio T-gate design; Epitaxial growth; Gallium nitride; Logic gates; MOCVD; Radio frequency;
Conference_Titel :
Device Research Conference (DRC), 2011 69th Annual
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-61284-243-1
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2011.5994527
