Title :
Surface modification of crystalline Si irradiated by femtosecond laser pulses
Author :
Izawa, Yu. ; Fujita, M. ; Setsuhara, Y. ; Hashida, M. ; Izawa, Y.
Author_Institution :
Inst. of Laser Eng., Osaka Univ.
Abstract :
Surface modification of crystalline Si by a femtosecond laser at room temperature in air was studied. The femtosecond laser pulses (800 nm wavelength, 100 fs pulse duration, 1 kHz repetition rate) were focused on the crystalline Si targets (p type, 99.999% purity, (100) direction) by a plano-concave lens with a focal length of 100 mm. It was found that there are four threshold fluences which characterize this structural modification
Keywords :
high-speed optical techniques; laser beam effects; laser materials processing; silicon; surface treatment; 100 fs; 100 mm; 293 to 298 K; 800 nm; Si; air; crystalline Si irradiation; femtosecond laser pulses; plano-concave lens; room temperature; structural modification; surface modification; threshold fluence; Atomic force microscopy; Atomic measurements; Crystallization; Force measurement; Laser beams; Laser theory; Optical pulses; Ring lasers; Surface emitting lasers; Surface morphology;
Conference_Titel :
Lasers and Electro-Optics Europe, 2005. CLEO/Europe. 2005 Conference on
Conference_Location :
Munich
Print_ISBN :
0-7803-8974-3
DOI :
10.1109/CLEOE.2005.1568439
