Silicon crystallization technique using 100-200mm long line beam with DPSS green lasers aimed for factory manufacturing of poly-Si TFT panels

Author

Yamazaki, Kinya ; Seike, Koji ; Kudo, Toshio

Author_Institution

Sumitomo Heavy Ind., Ltd., Kanagawa

fYear

2005

fDate

17-17 June 2005

Firstpage

666

Lastpage

666

Abstract

Excimer lasers are currently applied for factory manufacturing of poly-Si TFT panels. Compared with excimer lasers, DPSS green lasers have stable pulse energy and infrequent maintenance and they are better suited for mass production of poly-Si TFT panels with higher quality and lower cost. Since the prototype had just insufficient beam length of less than 30 mm for poly-Si TFT panel production, we have developed 100-200 mm long beam homogenizer. In this paper, we present the developed long beam homogenizer optics and the large area lateral Si grain growth process using the practical long beam. This crystallization technique is aimed for manufacturing of poly-Si TFT of LCD (liquid crystal display) and OLED (organic light emitted display)

Keywords

crystallisation; laser materials processing; liquid crystal displays; manufacturing processes; mass production; organic light emitting diodes; silicon; solid lasers; thin film transistors; 100 to 200 mm; LCD; OLED; Si; Si grain growth process; diode pumped solid state green lasers; excimer lasers; factory manufacturing; liquid crystal display; long beam homogenizer; mass production; organic light emitted display; poly-Si TFT panel; silicon crystallization technique; Crystallization; Laser beams; Laser stability; Liquid crystal displays; Manufacturing; Optical beams; Optical pulses; Production facilities; Silicon; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe, 2005. CLEO/Europe. 2005 Conference on

Conference_Location

Munich

Print_ISBN

0-7803-8974-3

Type

conf

DOI

10.1109/CLEOE.2005.1568442

Filename

1568442