Modeling of ionizing radiation-induced degradation in multiple gate field effect transistors

The radiation response of advanced non-planar multiple gate field effect transistors (MuGFETs) has been shown to have a strong dependence on fin width (W). A scalable analytical model that can describe the radiation response of MuGFET devices as a function of W is presented here. A set of extracted parameters are used in conjunction with the closed-form expressions for the surface potential, thereby enabling accurate modeling of radiation-induced degradation of the I-V characteristics for these devices as a function of W. Total ionizing dose (TID) experiments are used to analyze and validate the modeling approach presented in this paper.