Title :
Total-dose effects caused by high-energy neutrons and γ-rays in Multiple-Gate FETs
Author :
Kilchytska, V. ; Alvarado, J. ; Collaert, N. ; Rooyakers, R. ; Militaru, O. ; Berger, G. ; Flandre, D.
Author_Institution :
Microelectron. Lab., Univ. catholique de Louvain, Louvain-la-Neuve, Belgium
Abstract :
This work investigates the effects of high-energy neutrons and γ-rays on Multiple-Gate FETs with different geometries (notably gate lengths down to 50 nm). The impact of radiation on device behavior is addressed through the variation of parameters such as threshold voltage, subthreshold slope, transconductance maximum and DIBL. It is shown that degradations caused by γ-rays and high-energy neutrons with similar doses are largely similar. It is revealed that, contrarily to the generally-believed immunity to irradiation, very short-channel FinFETs can become extremely sensitive to the total dose effect. The possible reasons are discussed.
Keywords :
field effect transistors; gamma-rays; radiation effects; γ-rays; DIBL; high-energy neutrons; multiple-gate FET; radiation impact; subthreshold slope; threshold voltage; total-dose effects; transconductance maximum; γ irradiation; FinFETs; high-energy neutrons; interface traps;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on
Conference_Location :
Bruges
Print_ISBN :
978-1-4577-0492-5
Electronic_ISBN :
0379-6566
DOI :
10.1109/RADECS.2009.5994544
