Total-dose effects caused by high-energy neutrons and γ-rays in Multiple-Gate FETs

Author

Kilchytska, V. ; Alvarado, J. ; Collaert, N. ; Rooyakers, R. ; Militaru, O. ; Berger, G. ; Flandre, D.

Author_Institution

Microelectron. Lab., Univ. catholique de Louvain, Louvain-la-Neuve, Belgium

fYear

2009

fDate

14-18 Sept. 2009

Firstpage

7

Lastpage

13

Abstract

This work investigates the effects of high-energy neutrons and γ-rays on Multiple-Gate FETs with different geometries (notably gate lengths down to 50 nm). The impact of radiation on device behavior is addressed through the variation of parameters such as threshold voltage, subthreshold slope, transconductance maximum and DIBL. It is shown that degradations caused by γ-rays and high-energy neutrons with similar doses are largely similar. It is revealed that, contrarily to the generally-believed immunity to irradiation, very short-channel FinFETs can become extremely sensitive to the total dose effect. The possible reasons are discussed.

Keywords

field effect transistors; gamma-rays; radiation effects; γ-rays; DIBL; high-energy neutrons; multiple-gate FET; radiation impact; subthreshold slope; threshold voltage; total-dose effects; transconductance maximum; γ irradiation; FinFETs; high-energy neutrons; interface traps;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on

Conference_Location

Bruges

ISSN

0379-6566

Print_ISBN

978-1-4577-0492-5

Electronic_ISBN

0379-6566

Type

conf

DOI

10.1109/RADECS.2009.5994544

Filename

5994544