Front-end performance and charge collection properties of heavily irradiated DNW MAPS

Author

Ratti, Lodovico ; Dellagiovanna, Marco ; Manghisoni, Massimo ; Re, Valerio ; Traversi, Gianluca ; Zucca, Stefano ; Bettarini, Stefano ; Morsani, Fabio ; Rizzo, Giuliana

Author_Institution

Dipt. di Elettron., Univ. degli Studi di Pavia, Pavia, Italy

fYear

2009

fDate

14-18 Sept. 2009

Firstpage

33

Lastpage

40

Abstract

Deep N-well (DNW) CMOS monolithic active pixel sensors (MAPS) fabricated in a 130 nm technology have been exposed to γ-rays up to an integrated dose of about 10 Mrad and subjected to a 100 °C/168 h annealing cycle. Device tolerance to total ionizing dose has been evaluated by monitoring the change in charge sensitivity, noise and charge collection properties after each step of the irradiation and annealing campaign. Damage mechanisms and their relation to front-end architecture and sensor features are thoroughly discussed by comparing the response to ionizing radiation of different test structures and based on radiation induced degradation models in single MOS transistors.

Keywords

CMOS image sensors; MOSFET; annealing; gamma-ray effects; semiconductor counters; semiconductor device noise; γ-rays; annealing campaign; annealing cycle; change monitoring; charge collection property; charge sensitivity; damage mechanisms; deep N-well CMOS monolithic active pixel sensors; device tolerance; front-end architecture; front-end performance; heavily irradiated DNW MAPS; integrated dose; ionizing radiation; irradiation; noise; radiation induced degradation models; sensor features; single MOS transistors; size 130 nm; temperature 100 C; time 168 h; total ionizing dose; Annealing; Capacitance; Leakage current; Noise; Radiation effects; Sensitivity; Transistors; CMOS; MAPS; analog front-end; deep N-well; ionizing radiation;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on

Conference_Location

Bruges

ISSN

0379-6566

Print_ISBN

978-1-4577-0492-5

Electronic_ISBN

0379-6566

Type

conf

DOI

10.1109/RADECS.2009.5994549

Filename

5994549