Effects of proton and ion beam irradiation on titanium dioxide memristors

Effects of titanium dioxide memristor exposure to proton and ion beams are investigated. A memristor model assuming ohmic electronic conduction and linear ionic drift is used for the analysis. Simulations of particle transport suggest that radiation induced oxygen ion/oxygen vacancy pairs can influence the device´s operation by lowering both the mobility of the vacancies and the resistance of the stoichiometric oxide region. These radiation induced changes affect the current-voltage characteristic and state retention ability of the memristor.