Title :
Large SET broadening in a fully-depleted SOI technology — Mitigation with body contacts
Author :
Ferlet-Cavrois, V. ; Kobayashi, D. ; McMorrow, D. ; Schwank, J.R. ; Ikeda, H. ; Gaillardin, M. ; Flament, O. ; Hirose, K.
Abstract :
Large SET broadening effects are shown in fully-depleted SOI inverter chains using laser irradiation. These broadening effects are due to significant floating-body effects in single transistors. Designing with body contacts can efficiently suppress these effects.
Keywords :
elemental semiconductors; invertors; laser beam effects; silicon; silicon-on-insulator; transients; transistors; Si; body contact mitigation; floating-body effect; fully-depleted SOI inverter chain technology; large SET broadening effect; large single event transient broadening; laser irradiation; transistors; Inverters; Logic gates; Measurement by laser beam; Radiation effects; Silicon; Transient analysis; Transistors; Propagation induced broadening; Single Event Transient; body contacts; floating body effect;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on
Conference_Location :
Bruges
Print_ISBN :
978-1-4577-0492-5
Electronic_ISBN :
0379-6566
DOI :
10.1109/RADECS.2009.5994558
