DocumentCode :
2904980
Title :
Insulation Degradation and Bias Acceleration Effect Study under THB Test
Author :
Zhou, Jianwei ; Zheng, Wei ; Lou, Minyi ; Lee, Taekoo
Author_Institution :
Samsung Semicond. China R&D Co. Ltd., Suzhou
fYear :
2007
fDate :
14-17 Aug. 2007
Firstpage :
1
Lastpage :
4
Abstract :
It is well known that temperature humidity bias (THB) test is widely used to evaluate the moisture resistance of non-hermetic packages in semiconductor industry. The high humidity environment, high temperature and bias will reveal potential defects of package material and potential design problem that is hard to be detected at normal condition. In tins paper, a double daisy chain structure substrate was designed to make the subsequent measurement more convenient. The insulation property degradation due to THB test was evaluated. The insulation property of dielectric material would get degradation with THB test time. But even the degraded resistance after 1100 h THB test was still high enough to prevent dielectric failure occurring internal to the substrate. The acceleration effect of bias on THB test was studied. Increasing bias would greatly accelerate the THB test and shorten the test time. The acceleration factor of different bias was analyzed.
Keywords :
ball grid arrays; dielectric materials; humidity; insulation testing; moisture; bias acceleration effect; dielectric failure; dielectric material; double daisy chain structure; insulation degradation; moisture resistance; package defects; semiconductor industry; temperature humidity bias test; time 1100 h; Degradation; Dielectric materials; Dielectric substrates; Dielectrics and electrical insulation; Humidity; Insulation testing; Life estimation; Semiconductor device packaging; Semiconductor device testing; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Packaging Technology, 2007. ICEPT 2007. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1392-8
Electronic_ISBN :
978-1-4244-1392-8
Type :
conf
DOI :
10.1109/ICEPT.2007.4441501
Filename :
4441501
Link To Document :
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