DocumentCode
2905073
Title
Development of GaAs pseudomorphic HEMTs at W-band
Author
Guoliang, Zhu ; Mingwen, Yuan ; Chenhui, Liu ; Wei, Qiu ; Huijun, Nie
Author_Institution
Hebei Semicond. Res. Inst., Shijiazhuang, China
fYear
1996
fDate
12-15 Aug 1996
Firstpage
66
Lastpage
69
Abstract
The development of GaAs pseudomorphic HEMTs (PHEMTs) at W-band without using electron beam direct writing is described and the obtained results are reported. The maximum oscillation frequency for the developed device is over 150 GHz. This is the first GaAs PHEMT at W-band fabricated by the conventional UV photolithographic technique
Keywords
III-V semiconductors; equivalent circuits; gallium arsenide; high electron mobility transistors; millimetre wave field effect transistors; photolithography; semiconductor device models; 150 GHz; EHF; GaAs; GaAs PHEMT; MM-wave device; T-gate type; UV photolithographic technique; W-band; pseudomorphic HEMTs; Electron beams; Frequency; Gallium arsenide; HEMTs; Heterojunctions; Molecular beam epitaxial growth; Noise figure; PHEMTs; Temperature; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
Millimeter Wave and Far Infrared Science and Technology, 1996. Proceedings., 4TH International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-3619-4
Type
conf
DOI
10.1109/ICMWFT.1996.574718
Filename
574718
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