A CMOS integrated system for SEE-induced transients acquisition

Author

Bota, S.A. ; Merino, J.L. ; Alorda, B. ; Verd, J. ; Torrens, G. ; Segura, J.

Author_Institution

Grup de Sistemes Electron., Univ. de les Illes Balears, Palma, Spain

fYear

2009

fDate

14-18 Sept. 2009

Firstpage

160

Lastpage

164

Abstract

We present the design and operation of a monitor circuit that captures the effect of ionizing particles on sensitive CMOS IC internal nodes. The circuit implements a Single Event Effects (SEE) detector and a quick sampling block that captures the SEE induced waveform shape currents during a certain time window. These values can be read externally through a dedicated decoding circuitry. The circuit has been designed and fabricated on a 130 nm technology. Preliminary experimental results and detailed simulations are provided to demonstrate the feasibility of the system implemented.

Keywords

CMOS integrated circuits; decoding; transient analysis; CMOS integrated system; SEE-induced transient acquisition; decoding circuitry; sensitive CMOS IC internal nodes; single event effect detector; size 130 nm; Power supplies; Watches; Monolithic integrated circuits; Single-event transients; analog memory; soft errors; transient current monitoring;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on

Conference_Location

Bruges

ISSN

0379-6566

Print_ISBN

978-1-4577-0492-5

Electronic_ISBN

0379-6566

Type

conf

DOI

10.1109/RADECS.2009.5994573

Filename

5994573