DocumentCode
2905143
Title
Gate bias dependence of single event charge collection in AlSb/InAs HEMTs
Author
DasGupta, S. ; McMorrow, D. ; Reed, R.A. ; Schrimpf, R.D. ; Boos, J. Brad
Author_Institution
Electr. Eng. & Comput. Sci. Dept., Vanderbilt Univ., Nashville, TN, USA
fYear
2009
fDate
14-18 Sept. 2009
Firstpage
166
Lastpage
170
Abstract
Single event charge collection in AlSb/InAs HEMTs is shown to depend on the gate bias. Spatial correlation between excess channel carriers and the horizontal field is shown to be the key factor. Hole accumulation in the AlSb buffer layer increases the electron concentration in the two-dimensional electron gas, increasing the collected charge.
Keywords
III-V semiconductors; aluminium compounds; high electron mobility transistors; indium compounds; two-dimensional electron gas; AlSb-InAs; HEMT; electron concentration; gate bias dependence; hole accumulation; horizontal field; single event charge collection; spatial correlation; two-dimensional electron gas; AlSb/InAs; Charge Ccllection; HEMT; Single Event; TCAD;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on
Conference_Location
Bruges
ISSN
0379-6566
Print_ISBN
978-1-4577-0492-5
Electronic_ISBN
0379-6566
Type
conf
DOI
10.1109/RADECS.2009.5994575
Filename
5994575
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