• DocumentCode
    2905173
  • Title

    MUSCA SEP3 contributions to investigate the direct ionization proton upset in 65nm technology for space, atmospheric and ground applications

  • Author

    Hubert, G. ; Duzellier, S. ; Bezerra, F. ; Ecoffet, R.

  • Author_Institution
    French Aerosp. Lab. (ONERA), Toulouse, France
  • fYear
    2009
  • fDate
    14-18 Sept. 2009
  • Firstpage
    179
  • Lastpage
    186
  • Abstract
    This paper presents the investigation of upset induced by direct ionisation of proton in 65nm technology and evaluates the operational SER consequences in space, atmospheric and ground environments.
  • Keywords
    CMOS integrated circuits; SRAM chips; silicon-on-insulator; CMOS; MUSCA SEP contributions; SOI SRAM; Si; atmospheric applications; direct ionisation; ground applications; multiscales single event phenomena predictive platform; operational SER consequences; silicon-on-insulator technology; single event rate; size 65 nm; space applications; Neutrons; Protons; Silicon; Single event upset; Topology; direct ionization of proton; nanometric technology; operational SER; space — atmospheric — ground applications;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on
  • Conference_Location
    Bruges
  • ISSN
    0379-6566
  • Print_ISBN
    978-1-4577-0492-5
  • Electronic_ISBN
    0379-6566
  • Type

    conf

  • DOI
    10.1109/RADECS.2009.5994577
  • Filename
    5994577
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2905173