DocumentCode
2905208
Title
Collected charge analysis for a new advanced transient model by TCAD simulation in 90nm technology
Author
Artola, L. ; Hubert, G. ; Bezerra, F. ; Duzellier, S. ; Castellani-Coulié, K.
Author_Institution
ONERA, Toulouse, France
fYear
2009
fDate
14-18 Sept. 2009
Firstpage
187
Lastpage
193
Abstract
TCAD simulations of a 90nm CMOS bulk technology have been performed to investigate how technologies parameters impact on collection charge leading to Single Event Effects. This work proposes an updated advanced collection model.
Keywords
CMOS integrated circuits; circuit CAD; circuit simulation; technology CAD (electronics); transient analysis; CMOS bulk technology; TCAD simulation; charge analysis; single event effects; size 90 nm; transient model; Doping profiles; Junctions; Mathematical model; Semiconductor process modeling; Substrates; Transient analysis; Charge collection model; Heavy Ion; TCAD simulation; depletion zone; single event effect;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on
Conference_Location
Bruges
ISSN
0379-6566
Print_ISBN
978-1-4577-0492-5
Electronic_ISBN
0379-6566
Type
conf
DOI
10.1109/RADECS.2009.5994578
Filename
5994578
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