Enabling mixed-mode analysis of nano-scale SiGe BiCMOS technologies in extreme environments

Author

Turowski, Marek ; Raman, Ashok ; Fedoseyev, Alex

Author_Institution

CFD Res. Corp. (CFDRC), Huntsville, AL, USA

fYear

2009

fDate

14-18 Sept. 2009

Firstpage

213

Lastpage

216

Abstract

The latest enhancements to NanoTCAD mixed-mode software package, combining 3D physics-based nano-scale device models and unique mixed-mode interface to the Cadence Spectre circuit simulator, have enabled simulations and in-operation analysis of ionizing radiation single event effects (SEEs) in modern high-speed SiGe BiCMOS technologies and integrated circuits. Additionally, the NanoTCAD new, automated interface to Geant4 radiation models and the 3D solver capability to model very low temperature behavior, enable a comprehensive and accurate modeling of radiation effects in nano-scale systems, in the extreme radiation and temperature environments of space. Example simulations of SEEs affecting digital output of a 7.2GHz mixed-signal circuit are presented. Our mixed-mode modeling results compare very well with experimental data.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; bipolar MMIC; circuit simulation; field effect MMIC; mixed analogue-digital integrated circuits; nanoelectronics; radiation effects; semiconductor device models; software packages; technology CAD (electronics); 3D physics-based nanoscale device model; 3D solver capability; Cadence Spectre circuit simulator; Geant4 radiation model; NanoTCAD mixed-mode software package; SiGe; frequency 7.2 GHz; high-speed BiCMOS technology; integrated circuits; ionizing radiation single event effect; mixed-mode analysis; mixed-mode interface; mixed-signal circuit; nanoscale BiCMOS technology; radiation effect modeling; temperature behavior; Computational modeling; Heterojunction bipolar transistors; Integrated circuit modeling; Silicon germanium; Solid modeling; Three dimensional displays; 3D semiconductor device modeling; Geant4; extreme low temperatures; nuclear and space radiation effects; radiation hardening; single event effects;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on

Conference_Location

Bruges

ISSN

0379-6566

Print_ISBN

978-1-4577-0492-5

Electronic_ISBN

0379-6566

Type

conf

DOI

10.1109/RADECS.2009.5994582

Filename

5994582