DocumentCode :
2905301
Title :
Enabling mixed-mode analysis of nano-scale SiGe BiCMOS technologies in extreme environments
Author :
Turowski, Marek ; Raman, Ashok ; Fedoseyev, Alex
Author_Institution :
CFD Res. Corp. (CFDRC), Huntsville, AL, USA
fYear :
2009
fDate :
14-18 Sept. 2009
Firstpage :
213
Lastpage :
216
Abstract :
The latest enhancements to NanoTCAD mixed-mode software package, combining 3D physics-based nano-scale device models and unique mixed-mode interface to the Cadence Spectre circuit simulator, have enabled simulations and in-operation analysis of ionizing radiation single event effects (SEEs) in modern high-speed SiGe BiCMOS technologies and integrated circuits. Additionally, the NanoTCAD new, automated interface to Geant4 radiation models and the 3D solver capability to model very low temperature behavior, enable a comprehensive and accurate modeling of radiation effects in nano-scale systems, in the extreme radiation and temperature environments of space. Example simulations of SEEs affecting digital output of a 7.2GHz mixed-signal circuit are presented. Our mixed-mode modeling results compare very well with experimental data.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; bipolar MMIC; circuit simulation; field effect MMIC; mixed analogue-digital integrated circuits; nanoelectronics; radiation effects; semiconductor device models; software packages; technology CAD (electronics); 3D physics-based nanoscale device model; 3D solver capability; Cadence Spectre circuit simulator; Geant4 radiation model; NanoTCAD mixed-mode software package; SiGe; frequency 7.2 GHz; high-speed BiCMOS technology; integrated circuits; ionizing radiation single event effect; mixed-mode analysis; mixed-mode interface; mixed-signal circuit; nanoscale BiCMOS technology; radiation effect modeling; temperature behavior; Computational modeling; Heterojunction bipolar transistors; Integrated circuit modeling; Silicon germanium; Solid modeling; Three dimensional displays; 3D semiconductor device modeling; Geant4; extreme low temperatures; nuclear and space radiation effects; radiation hardening; single event effects;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on
Conference_Location :
Bruges
ISSN :
0379-6566
Print_ISBN :
978-1-4577-0492-5
Electronic_ISBN :
0379-6566
Type :
conf
DOI :
10.1109/RADECS.2009.5994582
Filename :
5994582
Link To Document :
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