Title :
3D Simulation of charge collection and MNU in SEU hardened storage cells
Author :
Liu, Lin ; Zhao, Yuanfu ; Yue, Suge
Author_Institution :
Designing Dept., Beijing Microelectron. Technol. Inst., Beijing, China
Abstract :
Three-dimensional simulation is used to explore the basic charge-collection mechanisms in MOSEFT. Then the problem of multiple-node upset in DICE is studied. The results show the transient floating node and charge lateral diffusion are the key reasons for MNU.
Keywords :
MOS memory circuits; MOSFET; diffusion; 3D simulation; DICE; MNU; MOSFET; SEU hardened storage cell; charge collection mechanism; charge lateral diffusion; dual interlocked storage cell; multiple-node upset; transient floating node; Argon; Integrated circuit modeling; MOS devices; Numerical models; Semiconductor process modeling; Single event upset; Substrates; Charge collection; hardened cells; multiple-node upset (MNU);
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on
Conference_Location :
Bruges
Print_ISBN :
978-1-4577-0492-5
Electronic_ISBN :
0379-6566
DOI :
10.1109/RADECS.2009.5994585
