DocumentCode
2905421
Title
Effect of multiple injections on the SEEs in SRAM cell
Author
Toure, G. ; Portal, J.-M. ; Hubert, G. ; Castellani-Coulié, K. ; Lesea, A.
Author_Institution
IM2NP, IMT, Marseille, France
fYear
2009
fDate
14-18 Sept. 2009
Firstpage
252
Lastpage
255
Abstract
This paper presents a new approach to analyze nanometres SRAM response to SEE attributed to proton-Silicon interactions. It couples the MUlti SCAles Single-Event Phenomena Predictive Platform (MUSCA SEP3) with SPICE modelling to study multi-injections phenomena.
Keywords
SRAM chips; integrated circuit modelling; MUSCA SEP3; SEE multiinjection phenomena; SPICE modelling; multiscale single-event phenomena predictive platform; nanometre SRAM cell response; proton-silicon interaction; single event effects multiinjection phenomena; Delay; MOS devices; Protons; Random access memory; SPICE; Single event upset; Transient analysis; 90nm technology; MUSCA SEP3; SEU cross section; SPICE modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on
Conference_Location
Bruges
ISSN
0379-6566
Print_ISBN
978-1-4577-0492-5
Electronic_ISBN
0379-6566
Type
conf
DOI
10.1109/RADECS.2009.5994589
Filename
5994589
Link To Document