“Effective NIEL” in silicon: Calculation using molecular dynamic simulation results

Molecular dynamic studies demonstrate that, under suitable conditions, low energy transfer below the atomic displacement threshold (T_d) can increase damage production. In the case of silicon material, both these non linear subthreshold phenomena and recombination effects have been incorporated in a new model. In comparison with Kinchin Pease approach, our improved model, is able to estimate more accurately the number of displacements generated by a primary knock on atom. It is then used to calculate “effective NIEL”.