Title :
A 200°C automatic gain controlled oscillator for MEMS resonator with an MRC transimpedance
Author :
Robert, Olivier ; Amendola, Gilles ; Chen, Hua
Author_Institution :
Groupe ESIEE, EL.MI. Lab., Noisy Le Grand, France
Abstract :
A MEMS (micro electro-mechanical system) resonator oscillator is presented in this paper. It is based on a transimpedance amplifier (current to voltage converter) with a voltage controllable gain. The complete architecture of the oscillator is designed to control the oscillation amplitudes. The novelty of this paper is the use of an MRC (MOS resistive circuit) as active element to control the gain. The differential structure of the MRC is suitable for a high temperature environment (200°C). Each of the cells of the oscillator have been designed and simulated at transistor level in a standard 0.6 μm CMOS technology. The global electronic system simulation has been driven for a large temperature range.
Keywords :
CMOS integrated circuits; amplifiers; automatic gain control; circuit simulation; high-temperature electronics; integrated circuit design; integrated circuit modelling; micromechanical resonators; oscillators; 0.6 micron; 200 C; CMOS technology; MEMS resonator; MOS resistive circuit active element; MRC differential structure; MRC transimpedance; automatic gain controlled oscillator; current to voltage converter; global electronic system simulation; high temperature environment; micro electro-mechanical system; oscillation amplitude control; oscillator architecture; temperature range; transimpedance amplifier; transistor level cell design; transistor level simulation; voltage controllable gain; Automatic control; CMOS technology; Capacitance; Circuit simulation; Electrodes; Micromechanical devices; Resonance; Temperature; Voltage control; Voltage-controlled oscillators;
Conference_Titel :
ASIC/SOC Conference, 2002. 15th Annual IEEE International
Print_ISBN :
0-7803-7494-0
DOI :
10.1109/ASIC.2002.1158050
