A deep level transient spectroscopy study of electron and proton irradiated p+n GaAs diodes

Defects produced by 0.6 MeV, 1 MeV, and 5 MeV electrons are compared with those produced by 2 MeV proton irradiations in p⁺n GaAs diodes using Deep Level Transient Spectroscopy (DLTS). The introduction rates are determined as a function of electron energy and compared with the nonionizing energy loss (NIEL). It has been determined that a majority of the electron-induced defects (E-traps) are similar to those observed following proton irradiation (PR-traps). However, a new defect emerges in the 5 MeV electron DLTS spectrum with a peak maximum occurring at ~163 K which is not observed at the other electron energies. It has been determined that this new electron-induced defect which has previously not been detected is the proton-induced PR4" defect. This defect emerges as the incident electron energy is increased suggesting it is formed by higher energy recoils and may be a complex defect. The recoil spectra are analyzed.