Title :
High Q embedded inductors in silicon for RF applications
Author :
Sridharan, Sharmila ; Grande, William ; Mukund, P.R.
Author_Institution :
Dept. of Electr. Eng., Rochester Inst. of Technol., NY, USA
Abstract :
The quality of integrated inductors plays a crucial part in RF IC design. Due to the losses in parasitics associated with vias and substrate coupling, the performance has been limited in spiral inductors that are typically fabricated in the top metal layer in CMOS technology. In this paper, we demonstrate the feasibility of planar embedded inductors that improve the quality factor significantly. Results show that the Q factor can easily be doubled using this novel technology.
Keywords :
CMOS integrated circuits; Q-factor; circuit simulation; inductors; integrated circuit design; integrated circuit modelling; losses; radiofrequency integrated circuits; CMOS technology high Q embedded inductors; CMOS top metal layers; Q factor; RF IC design; Si; integrated inductor quality; planar embedded inductors; spiral inductor performance limitation; vias/substrate coupling parasitic losses; CMOS technology; Circuit noise; Conductivity; Inductors; Q factor; Radio frequency; Radiofrequency integrated circuits; Silicon; Spirals; Substrates;
Conference_Titel :
ASIC/SOC Conference, 2002. 15th Annual IEEE International
Print_ISBN :
0-7803-7494-0
DOI :
10.1109/ASIC.2002.1158083
