Title :
A 109 nW, 44 ppm/°C CMOS Current Reference with Low Sensitivity to Process Variations
Author :
De Vita, Giuseppe ; Iannaccone, Giuseppe
Author_Institution :
Dipt. di Ingegneria dell´´ Informazione: Elettronica, Informatica, Telecomunicazioni, Universita degli Studi di Pisa
Abstract :
We present the design of a circuit, implemented in a standard 0.35 mum CMOS process, that provides a bias current practically independent of temperature and process variations. Experimental results show that the proposed circuit provides a reference current with a temperature coefficient of 44 ppm/degC over a range from 0 to 80 degC. The reference current is generated by exploiting a MOS transistor as current defining element, instead of a resistor, allowing us to achieve a relative standard deviation due to process variations of 2% . The minimum supply voltage is 1.3 V and the minimum supply current is 36 nA. The line sensitivity is 569 ppm/V. The chip area is 0.035 mm2.
Keywords :
CMOS integrated circuits; reference circuits; 0 to 80 C; 0.35 micron; 1.3 V; 109 nW; 36 nA; CMOS current reference circuit; CMOS process; MOS transistor; current defining element; Batteries; CMOS process; Circuits and systems; Current supplies; Low voltage; MOSFETs; Resistors; Telecommunication standards; Temperature distribution; Temperature sensors;
Conference_Titel :
Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium on
Conference_Location :
New Orleans, LA
Print_ISBN :
1-4244-0920-9
Electronic_ISBN :
1-4244-0921-7
DOI :
10.1109/ISCAS.2007.378790
