Laser SEL sensitivity mapping of SRAM cells

Author

Burnell, A.J. ; Chugg, A.M. ; Harboe-Sørensen, R.

Author_Institution

Radiat. Effects Group, MBDA UK Ltd., Bristol, UK

fYear

2009

fDate

14-18 Sept. 2009

Firstpage

324

Lastpage

328

Abstract

It is shown that laser SEL sensitivity mapping at the cell level exhibits a repetitive pattern. In conjunction with depth profiling, individual sensitive regions are shown to be approximate fat ellipsoids, which has implications for SEL specifications in the space environment.

Keywords

SRAM chips; laser beam effects; SEL specifications; SRAM cells; cell level; depth profiling; fat ellipsoids; individual sensitive regions; laser SEL sensitivity mapping; repetitive pattern; space environment; Absorption; Lasers; Mirrors; Monitoring; Random access memory; Sensitivity; Single event upset; SRAM; Single event effects (SEE); single event latch-up (SEL); single event upset (SEU); test facilities;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on

Conference_Location

Bruges

ISSN

0379-6566

Print_ISBN

978-1-4577-0492-5

Electronic_ISBN

0379-6566

Type

conf

DOI

10.1109/RADECS.2009.5994668

Filename

5994668

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2906894