Indium phosphide-based femtosecond devices for ultrahigh throughput communications and signal-processing systems

Author

Wada, Osamu

Author_Institution

FESTA Lab., Femtosecond Technol. Res. Assoc., Tsukuba, Japan

fYear

1999

fDate

1999

Firstpage

7

Lastpage

10

Abstract

Ultrafast optoelectronic devices are crucial for fulfilling the future requirement of network throughput to enter the 1 Tb/s to 10 Tb/s range. A variety of ultrafast phenomena in InP-based semiconductors are attractive for developing such new optoelectronic devices. This paper discusses the requirements of ultrafast optical communication and signal-processing systems and devices necessary for them. Recent advances in the development of ultrafast semiconductor-based optoelectronic devices, such as ultrashort pulse lasers and ultrafast all-optical switches, are described,

Keywords

III-V semiconductors; high-speed optical techniques; indium compounds; laser beam applications; optical communication equipment; optical information processing; optical switches; optoelectronic devices; 1 to 10 Tbit/s; InP; InP-based semiconductors; Tb/s range; indium phosphide-based femtosecond devices; optoelectronic devices; signal-processing system; signal-processing systems; ultrafast all-optical switches; ultrafast optical communication; ultrafast optoelectronic devices; ultrafast phenomena; ultrafast semiconductor-based optoelectronic devices; ultrahigh throughput communications; ultrashort pulse lasers; Indium; Light sources; Optical fiber communication; Optical pulse generation; Optical wavelength conversion; Optoelectronic devices; Semiconductor lasers; Throughput; Ultrafast electronics; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Conference_Location

Davos

ISSN

1092-8669

Print_ISBN

0-7803-5562-8

Type

conf

DOI

10.1109/ICIPRM.1999.773619

Filename

773619